T-RAM Semiconductor has delivered fully manufacturable, high-speed embedded memory solutions.
Our experienced technology and circuit memory developers have spent hundreds of man-years creating and optimizing
the TCCT™ cell and cell array for maximum yield over fab processing variations. The result is yield that is
limited only by the periphery of the RAM macro, not by the cells themselves.
Multiple test chips have been used to develop the capabilities of both the cell
and the cell arrays. These test
chips have progressed to provide full Synchronous SRAM functionality and full datasheet compatibiliy with
commercial Synchronous SRAM products on the market. Manufacturability has been proven by commercially
competitive yields on these product-equivalent test vehicles.
For questions and more information, please contact us at firstname.lastname@example.org
The TCCT™ cell process has been carefully integrated to maximize performance without altering or
compromising the baseline technology. No new materials or processes were introduced and only implants are needed to
form the TCCT™. To accomplish this integration, thousands of wafers have been processed during the development,
ensuring maximum performance over a large sample of material.
The large signal-to-noise ratio of the TCCT™ cell aids the manufacturing robustness of
T-RAM Semicondcutor's technology. Other aspects of the cell and array design have been chosen to be tolerant of
normal variation, resulting in high and consistent yields across the full range of fab process variation.
The reliability of the TCCT™ cell and cell arrays have been proven with extensive reliability testing using industry standard methods. The
technology has produced excellent reliability results that are competitive with standard high-speed SRAM products and enable embedded
users to produce products with high reliability memory.