Publication Listing

International Electron Device Meeting 2004
Major advancements in T-RAM cell manufacturability were recently showcased at International Electron Device Meeting 2004, demonstrating 9Mb T-RAM arrays with functionality and performance of 6T-SRAM but at 1/4th the cell area using a fully-planar SOI T-RAM cell.

International Electron Device Meeting 1999
Functional cells were demonstrated for the first time verifying the concept and the operation of a T-RAM cell. A vertical pillar implementation of the TCCT (Thin Capacitively Coupled Thyristor) was used in the original work done at Stanford University.

Symposium on VLSI Technology 1998
A novel thyristor device structure, also known as TCCT (Thin Capacitively Coupled Thyristor), was introduced as a memory storage element of a T-RAM cell. TCCT switching speeds orders of magnitude faster than a conventional thyristor were demonstrated for the first time.