In the last 10 years the need for faster and denser Random Access Memory (RAM) has increased significantly. The Internet revolution dramatically accelerated network performance requirements, but the technological limits of DRAM and SRAM have created a bottleneck defined by the slow speed of DRAMs and the low density of SRAMs. System Designers have struggled for years to find a solution that successfully matches the density of DRAM with the high speed of SRAM.

T-RAM's breakthrough technology is based on a Negative Differential Resistance based (NDR-based) RAM cell, which we call TCCT™ (Thin-Capacitively-Coupled-Thyristor), which provides the best of both worlds: The High Performance of SRAM, but at a fraction of the 6T-SRAM memory cell size. Our TCCT™ technology is a breakthrough from the traditional 1T and 6T memory cell designs and can completely satisfy evolving high-end system needs. The result is High Performance, High Density, Discrete and Embedded SRAM products, based on our proprietary TCCT™ technology.

T-RAM TCCT™ technology has been proven to be highly scalable and will allow for levels of SRAM density migration not possible with 6T-SRAM technology.
T-RAM's first generation TCCT™ technology can today produce Discrete and Embeddable High Performance Synchronous SRAM's at 2X to 4X the competitors 6T-SRAM solutions - all on the same technology node! We are already working on our next two generations of TCCT™ technology in which we expect to match DRAM density while maintaing SRAM performance.

A key attribute of T-RAM TCCT™ technology is the ability to embed into 'any' logic process 'without' impacting the performance of the peripheral transistors. Finding a RAM technology capable of this has been one of the 'holy grails' of logic design that prior to T-RAM's TCCT™ technology could only be done with standard 6T-SRAM. For years, many companies have tried to successfully embed standard DRAM technology to get the needed on-chip density, only to fail due to the complexity and cost of integrating DRAM into high performance logic technology. T-RAM started out with the goal of developing our TCCT™ technology to be integrated into high performance logic without impacting the peripheral logic - and we suceeded! Our first generation TCCT™ process was developed on the same high performance technology used for leading edge microprocessors.

It is clear that T-RAM TCCT™ memory products provides numerous advantages over existing memory solutions. The need for high end solutions will continue to expand into the future, but only through the adoption of T-RAM TCCT™ technology will existing information bottlenecks be overcome and eliminated.