Starting
Expectations &
Responsibilities |
Strong understanding of device physics, both MOS and bipolar. Proven ability to generate, test and validate hypothesis for observed effects and determine underlying physical mechanism.
Fast learner, learn T-RAM’s disruptive thyristor-based memory technology and make your first significant contribution within 30 days
Proven data analysis skills: Past work that shows examples of data analysis to separate effects from multiple factors; determine trade-offs and optimization strategy; identify root–cause for new/anomalous effects. Experience with design of experiments is a plus..
Proven problem solving skills: History of resolving complex problems that involved new/unexpected effects and/or utilizing a novel analysis technique.
Knowledge of device/process simulation analysis and ability to translate new experimental findings into a specific simulation study to gain insight.
Proven ability to generate novel ideas to address device issues.
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