CPU’s, DSP’s and Consumer products have constantly increased on-chip RAM (Random Access Memory) densities in order to boost performance and lower costs. RAM technology combining the lowest latency, lower product cost and ease of integration in standard CMOS processes, however, has been an unrealized goal of semiconductor design. T-RAM Semiconductor’s memory IP is the first RAM technology to answer that demand.

T-RAM Semiconductor is the inventor and developer of a revolutionary RAM technology based on our proprietary TCCT™ technology. We focus on developing and licensing IP based on our unique technology, seeking to build long-term relationships with customers as we enable products with high memory content. Our technology and design IP development teams are located at our headquarters in Milpitas, CA.

T-RAM Semiconductor’s TCCT™ technology was designed 'from the ground up' for ease of integration into both Silicon-on-Insulator (SOI) and bulk CMOS technologies using only standard fabrication equipment and materials. This technology creates a RAM cell that is one-fourth to one-sixteenth the size of traditional 6T-SRAM cells, delivering more density than is possible with 6T-SRAM yet retaining SRAM’s low latency. When integrated into standard CMOS technologies, TCCT™ technology is a more cost effective memory solution than either 6T-SRAM or embedded DRAM technologies.

For questions and more information, please contact us at info@t-ram.com.