CPU’s, DSP’s and Consumer products are constantly increasing their need for ever higher density on-chip RAM to both lower costs and boost performance. Random Access Memory (RAM) technology which has high-performance, low cost and ease of process integration into standard CMOS processes has been an unrealized goal of semiconductor companies and their customers for over 25 years.

T-RAM is a fab-less Semiconductor Company which has developed an innovative process based on TCCT (Thin-Capacitively-Coupled-Thyristor) technology which achieves this goal. With nearly 100 patents and pending patents, our TCCT technology is the basis for our first product line of High Performance Synchronous SRAM (Static Random Access Memory) chips targeting both the discrete and embedded memory needs of high-performance Compute Servers, Networking, and Telecom. T-RAM's TCCT-based high-performance Synchronous SRAM products are 100% fit, form and function compatible with SRAM products on the market today.

T-RAM invented the TCCT process to address the growing need for a ‘better’ RAM technology that would have all the positive high-performance attributes of traditional six-transistor SRAM (6T-SRAM) but at much higher density than 6T-SRAM can muster. Our TCCT technology is capable of producing high-density, high-performance, discrete and embeddable RAM products that will lower our customers costs while bringing the ‘next-generation’ density SRAM more than one technology generation or more sooner than 6T-SRAM technology.

T-RAM’s TCCT technology was designed 'from the ground up' to be straight-forward to integrate into both Silicon-on-Insulator (SoI) and bulk CMOS technologies using only standard fabrication equipment and materials. T-RAM’s TCCT technology creates a RAM cell that is ¹/4 to ¹/8 the size of traditional 6T-SRAM cells, delivering more density than is possible with 6T-SRAM, yet retains the high-performance attributes. T-RAM TCCT technology is more cost effective to integrate into high-performance logic technology, such as those used by microprocessors, than either 6T-SRAM or classical Embedded DRAM technology, the latter which increases the wafer manufacturing cost up to 50%, while delivering lower performance.

As T-RAM completes our first generation technology, we are already working on our 2nd and 3rd generation technologies that will continue to drive our TCCT technology to ever smaller RAM cell sizes, with a goal of producing SRAM products that could eventually rival DRAM in density.

T-RAM has raised over $46 million of venture financing from Mayfield, New Enterprise Associates, Tallwood Venture Capital, and US Venture Partners.